Are your MOSFET’s too hot ?
Diodes Inc’s DFN1212-3 packaged MOSFETs feature a junction to ambient thermal resistance (Rthj-a) of 130ºC/W, power dissipation of up to 1W (continuous) and footprint compatibility with SOT723 alternatives
Diodes Incorporated has launched its first MOSFETs to be housed in the miniature DFN1212-3 package.
Occupying the exact same 1.44mm printed circuit board area and with the same low profile (0.5mm) off-board height as the less thermally efficient SOT723 packaged devices, the new 20V rated DMN2300UFD (N-channel) and DMP21D0UFD (P-channel) MOSFETs offer a junction to ambient thermal resistance (Rthj-a) of 130ºC/W. SOT723 packaged MOSFETs are typically characterised by an Rthj-a performance of 280ºC/W.
The DFN1212-3 package supports a power dissipation of up to 1W under continuous conditions, ensuring significantly cooler operation than that achievable with existing footprint-compatible SOT723 devices. In addition the new MOSFETs presents a typical R DS(ON) of just 400mΩ at V GS of 1.8V, approximately 50% lower than the most popular SOT723 packaged alternatives, helping to dramatically reduce conduction losses and power dissipation.
Diodes’ DFN1212-3 packaged MOSFETs are drop-in replacements for high reliability signal and load-switching applications in a broad range of high portable consumer electronics products including digital cameras, tablet PCs and smartphones.
Customers located in France and Turkey are invited to click here and use the Ismosys Enquiry Service to request data, pricing and sample availability information. Customers elsewhere should visit http://www.diodes.com.