Diodes Inc’s DFN1212-3 packaged MOSFETs feature a junction to ambient thermal resistance (Rthj-a) of 130ºC/W, power dissipation of up to 1W (continuous) and footprint compatibility with SOT723 alternatives
Diodes Incorporated has launched its first MOSFETs to be housed in the miniature DFN1212-3 package.
Occupying the exact same 1.44mm printed circuit board area and with the same low profile (0.5mm) off-board height as the less thermally efficient SOT723 packaged devices, the new 20V rated DMN2300UFD (N-channel) and DMP21D0UFD (P-channel) MOSFETs offer a junction to ambient thermal resistance (Rthj-a) of 130ºC/W. SOT723 packaged MOSFETs are typically characterised by an Rthj-a performance of 280ºC/W.
The DFN1212-3 package supports a power dissipation of up to 1W under continuous conditions, ensuring significantly cooler operation than that achievable with existing footprint-compatible SOT723 devices. In addition the new MOSFETs presents a typical R DS(ON) of just 400mΩ at V GS of 1.8V, approximately 50% lower than the most popular SOT723 packaged alternatives, helping to dramatically reduce conduction losses and power dissipation.
Diodes’ DFN1212-3 packaged MOSFETs are drop-in replacements for high reliability signal and load-switching applications in a broad range of high portable consumer electronics products including digital cameras, tablet PCs and smartphones.
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